We are the distributor of TDK-Lambda in China, selling the full range of TDK-Lambda products. All products are original and genuine, and technical support can be provided. contact us Tel:+86-13288078002 Email: 467392003@qq.com   Email: yinhexing001@gmail.com As an advanced form of power supply, switch mode power supply is widely used in many fields such as industrial automation control, scientific research equipment, LED lighting, industrial control equipment, communication equipment, power equipment, instruments and meters, medical equipment, LCD displays, etc. due to its small size, light weight, and high efficiency. It is an indispensable power supply method for the rapid development of the electronic information industry today. As the core component of the power supply of electronic and electrical equipment, the stability of the switch power supply directly affects the normal operation of the entire electronic and electrical equipment. Therefore, effective quality management to continuously provide high-quality and reliable switch power supply products has become an important issue for switch power supply production enterprises. Switching power supply products mainly go through three stages in their lifecycle: pre production, production, and post production. Therefore, the quality management process of switching power supply also includes quality management from pre production to product design and development, quality management from production to manufacturing, and quality management from production to after-sales service. The design and development process refers to the entire development process of a product before it is officially put into production, including investigation and research, designated solutions, product design, process design, trial production, identification, standardization, and other work content. The product design and development process is the starting link of the product quality formation process, which "inherently" determines product quality and is also the basis and goal of quality management in the production and manufacturing process. As a professional manufacturer of switch mode power supplies, TDK Lambda attaches great importance to quality management in the design and development process. The company has established a strict design review process, which strictly manages the planning, input, output, review, verification, and confirmation of each stage of design and development from market research, project approval, specification determination, electrical and mechanical design, prototype production, small batch trial production to formal mass production, striving to achieve "research and development of one product, mature one". At the same time, in order to ensure the high reliability of the product, strict high standard reliability tests are conducted on the selected components and the final product in accordance with international standards during the review process of research and development design, to ensure that the product fully meets the customer's reliability requirements. With good design, there is also a need for a sound production and manufacturing process to transform ideal product designs from drawings into high-quality products that meet customer needs. The quality management of the production and manufacturing process is the main link in achieving design intentions and forming product quality, and also the guarantee for achieving enterprise quality goals. The manufacturing process of a product is an important foundation for the formation of product quality. The goal of the manufacturing process is to not deviate from the design and ensure the quality of design compliance. The task of quality management in the production and manufacturing process is to establish a production system under control, that is, the production process can stably and continuously produce products that meet the design quality. Only when the production system is in a controlled state can the continuity and reproducibility of qualified products be guaranteed

Please contact us to purchase TDK-Lambda power supply Tel:+86 -13288078002 Email: 467392003@qq.com Email: yinhexing001@gmail.com 1U highly programmable DC power supply 5kW adds 1000V and 1500V output voltage models for testing and development of electric vehicle batteries above 600V TDK Corporation (TSE 6762) announced the addition of two new models to the TDK-Lambda brand GENESYS+™ series of high power density programmable DC power supplies. This new addition expands the output voltage and current range of this series of products from 0-10V/500A to 0-1500V/3.4A, providing engineers with more and more seamless choices. Target applications for the high voltage 5kW power supply are automotive testing (including electric and hybrid vehicles equipped with high voltage batteries), general testing or research, measurement, semiconductor manufacturing, battery manufacturing and renewable energy. The two new voltage models can provide 0-1000V/0-5A and 0-1500V/0-3.4A programmable output. Input voltage range is three-phase 170 - 265Vac or wide range 342 - 528Vac with active power factor correction (PFC). The power supply can work in constant voltage, constant current or constant power limit mode, and also provides internal resistance simulation function. The series benefits from DSP (Digital Signal Processing) technology and the latest generation of components, including ferrite materials, to achieve efficiencies of up to 92%. Less internal heat dissipation ensures higher power ratings without compromising reliability. GENESYS+™ 5kW is suitable for zero-stack rack-mount installation and measures 423 mm wide, 486.5 mm deep, and 43.6 mm high (1U). Cooling is provided by a variable speed fan that adjusts air speed based on ambient temperature and output load, thereby reducing audible noise and thereby reducing operator fatigue. The weight of the power supply is less than 8.5kg, making it easy to carry. All models in the GENESYS+™ Series feature high-contrast, wide-viewing-viewing LCD displays with brightness control and dimming capabilities, faster rise and fall programming response times, and user-settable voltage and current slew rates. Arbitrary waveform profiles of up to 100 steps can be generated and stored in four memory locations and recalled via the communications port or front panel activation. The 5kW programmable power supply uses TDK-Lambda's advanced parallel system (patent pending), making the dynamic response and ripple and noise performance of multiple parallel systems comparable to that of a single power supply. The GENESYS+™ series supports up to 12 units in parallel. The power supplies can be connected in parallel through a signal cable and a DC output connection. Automatic configuration between master and slave power supplies is achieved by detecting parallel data connections and configuring parameters accordingly. The control methods of GENESYS+™ series power supplies from 1kW to 60kW are the same. They can be controlled locally through the front panel or remotely through the communication interface. The standard communication interfaces include LAN (LXI 1.5), USB 2.0 and RS232/485. As well as isolated analog control and monitoring interfaces (0-5V, 0-10V), optional communication interfaces include EtherCAT or Modbus-TCP or GPIB (IEEE488.2). Software drivers, waveform generator and virtual front panel GUI are provided in the software package. GENESYS+™ series power supplies come standard with safety features, providing safe boot/auto-restart mode, final settings storage and built-in protection. A blank front panel option is available without a display to avoid unauthorized changes to device settings. The GENESYS+™ range of products comes with a five-year warranty, is IEC/EN/UL 61010-1 safety certified, and carries CE and UKCA markings for low voltage, EMC and RoHS directives. The GENESYS+™ series meets the immunity requirements of the IEC/EN 61204-3 Class A standard for conducted and radiated EMI and EMC.

We are the distributor of TDKLambda in China. Our products are all guaranteed to be authentic from the original factory. We have affordable prices, ready inventory and fast delivery logistics. contact us Tel:+86 -13288078002 Email : yinhexing001@gmail.com Email: 467392003@qq.com website：https://www.patchcapacitance.com/tdk-lambda TPF45000-385 Series The TPF45000-385 non-isolated modular power supply offers output power levels up to 45kW and accepts 400/440/480Vac 3 phase delta or Wye inputs.  Providing a regulated 385Vdc output, the product can be used to provide a high voltage source to power isolated DC-DC converters used in distributed power  architecture systems. With an operating efficiency of 98%, waste heat is dramatically reduced, avoiding the need for water cooling. PMBus™ and USB interfaces  are available for monitoring and control. Containing ten 4,500W modules, the TPF45000 can be scaled down for lower power requirements. Features • 400/440/480 Vac (Nominal) 3 Phase Delta or Wye Inputs • PMBus™ and USB Interfaces • -20°C (Start-Up) to +50°C Operation • 98% Efficient • Less than 30kg Weight Benefits • Global Use • Flexible Control and Monitoring • Suitable for Industrial Environments • Less Energy Used • Easier Handling Model Selector

We are a TDK Lambda power distributor in China, and all products sold are from the original factory. We have in stock inventory and competitive prices. Comprehensive after-sales service and the ability to provide technical support The following is the technical information for a recommended TDK Lambda programmable power supply If you have any needs, please contact us Tel:+86 -13288078002 Email: 467392003@qq.com Email: yinhexing001@gmail.com website：TDK-Lambda power supply Supplier,TDK-Lambda power supply Manufacturer (patchcapacitance.com)   Model: GH10-150 Series: GENESYS+ Type: G+1U 1.5kW Brand: TDK Lambda   Electrical characteristics Input: Single phase Input voltage range [AC]: 85~265Vac Input frequency range: 47-63Hz Rated output voltage [DC]: 10Vdc Output voltage [DC]: 0-10Vdc Rated output current: 150A Output current: 0-150A Rated output power: 1500W Efficiency: 88% Typ Voltage ripple and noise: 0.006Vrms (5Hz to 1MHz) Current ripple and noise: 0.05Irms (5Hz to 1MHz)   Shape and size Shape: 1U rack mounted/desk mounted Width (W): 214mm Nom Height (H): 43.6mm No Depth (D): 441.5mm No Quality: 3500g Typ   other Including interfaces/functions LAN (LXI compliant) USB RS-232 RS-485 Insulation simulation voltage control   Interface Options GPIB Insulation simulation current control EtherCAT Modbus TCP   Working temperature range 0-50 ° C   Safety specifications (certification) IEC61010-1 CSA C22.2 No.61010-1 EN61010-1 UL61010-1        

ON Semiconductor (ONSEMI), headquartered in Phoenix, Arizona, is a leading provider of power solutions. ON Semiconductor's product portfolio includes power and signal management, logic, discrete and custom devices to help customers solve their unique design challenges in automotive, communications, computer, consumer electronics, industrial, LED lighting, medical, military/aerospace and power applications. , which is both fast and cost-effective. ON operates a world-class, value-added supply chain and network of manufacturing plants, ON dealers and design centers in key markets in North America, Europe and Asia Pacific. Galaxy Core Technology Co., Ltd. is ON Semiconductor's first-level agent in China, selling a full range of ON Semiconductor products, including power and signal management, logic, discrete and customized devices. We promise that the products we sell are all original and genuine products with guaranteed quality. And we can also provide professional technical support and after-sales service. If you have any needs for ON Semiconductor products, please contact us. Tel :+86 -13288078002 Email : 467392003@qq.com Email : yinhexing001@gmail.com website: https://www.patchcapacitance.com/ The following are recommendations for ON Semiconductor’s best-selling products: LM393DR2G  Product Catalog Comparator Input offset voltage (Vos) 5mV Input bias current (Ib) 250nA Hysteresis voltage (Vhys) - Common Mode Rejection Ratio (CMRR) - Working voltage 1V~18V; 2V~36V Output type open set Output mode - Supply current per channel 2.5mA Working temperature 0℃~+70℃ MMBT3906LT1G  Product Catalog Transistor (BJT) Transistor type PNP Collector current (Ic) 200mA Collector-emitter breakdown voltage (Vceo) 40V Power (Pd) 300mW DC current gain (hFE@Ic,Vce) 100@10mA,1V Characteristic frequency (fT) 250MHz Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 400mV@5mA,50mA Working temperature -55℃~+150℃@(Tj) LM2903DR2G  Product Catalog Comparator Input offset voltage (Vos) 7mV Input bias current (Ib) 250nA Hysteresis voltage (Vhys) - Common Mode Rejection Ratio (CMRR) - Working voltage 1V~18V; 2V~36V Output type open set Output mode - Supply current per channel 2.5mA Working temperature -40℃~+105℃ BAV99LT1G  Product Catalog Switching Diodes Diode configuration 1 pair in series Forward voltage drop (Vf) 1.25V@150mA DC reverse withstand voltage (Vr) 100V Average rectified current (Io) 215mA Power 300mW Reverse current (Ir) 1uA@100V Reverse recovery time (trr) 6ns Working temperature -65℃~+150℃@(Tj) SS14  Product Catalog Schottky Diodes Forward voltage drop (Vf) 500mV@1A DC reverse withstand voltage (Vr) 40V Average rectified current (Io) 1A Reverse current (Ir) 200uA@40V BSS138LT1G  Product Catalog Field Effect Transistor (MOSFET) Type N channel Drain-source voltage (Vdss) 50V Continuous drain current (Id) 200mA Power (Pd) 225mW On-resistance (RDS(on)@Vgs,Id) 3.5Ω@5V,200mA Threshold voltage (Vgs(th)@Id) 1.5V@1mA Input capacitance (Ciss@Vds) 50pF@25V Working temperature -55℃~+150℃@(Tj) 2N7002LT1G  Product Catalog Field Effect Transistor (MOSFET) Type N channel Drain-source voltage (Vdss) 60V Continuous drain current (Id) 115mA Power (Pd) 225mW On-resistance (RDS(on)@Vgs,Id) 7.5Ω@10V,500mA Threshold voltage (Vgs(th)@Id) 2.5V@250uA Input capacitance (Ciss@Vds) 50pF@25V Working temperature -55℃~+150℃@(Tj) MC34063ADR2G  Product Catalog DC-DC Power Supply Chip Function type: step-up type; step-down type Output type adjustable Input voltage 3V~40V Output voltage 1.25V~40V Output current (maximum) 1.5A Switching frequency 100kHz Working temperature 0℃~+70℃@(TA) Synchronous rectification No Number of output channels 1 Topology: Boost; Buck Switch tube (internal/external) internal MC33078DR2G  Product Catalog Operational Amplifier Number of amplifiers Dual Gain bandwidth product (GBP) 16MHz Input bias current (Ib) 300nA Slew rate (SR) 7V/us Output current 37mA Bandwidth (-3db) - Working temperature -40℃~+85℃ ESD9B3.3ST5G  Product Catalog Electrostatic and Surge Protection (TVS/ESD) Polarity bidirectional Reverse cut-off voltage (Vrwm) 3.3V Maximum clamping voltage 11.5V Peak pulse current (Ipp)@10/1000us 2A Breakdown voltage 5V Number of channels single channel Working temperature -55℃~+150℃@(Tj) Type ESD ESD9X3.3ST5G  Product Catalog Electrostatic and Surge Protection (TVS/ESD) Polarity Unidirectional Reverse cut-off voltage (Vrwm) 3.3V Maximum clamping voltage 10.4V Peak pulse current (Ipp)@10/1000us 9.8A Peak pulse power (Ppp)@10/1000us 102W Breakdown voltage 5V Number of channels single channel Working temperature -55℃~+150℃@(Tj) Type ESD NCP1654BD65R2G  Product Catalog AC-DC Controllers and Regulators Power supply voltage 9V~20V Switching frequency 58kHz~72kHz Working temperature -40℃~+125℃ SMF05CT1G  Product Catalog Electrostatic and Surge Protection (TVS/ESD) Reverse cut-off voltage (Vrwm) 5V Maximum clamping voltage 12.5V Peak pulse power (Ppp)@10/1000us 100W Breakdown voltage 6.2V Number of channels: five Working temperature -40℃~+125℃@(Tj) Type ESD NSR0320MW2T1G Product Catalog Schottky Diodes Forward voltage drop (Vf) 500mV@900mA DC reverse withstand voltage (Vr) 20V Average rectified current (Io) 1A Reverse current (Ir) 50uA@15V MMBT5401LT1G  Product Catalog Transistor (BJT) Transistor type PNP Collector current (Ic) 500mA Collector-emitter breakdown voltage (Vceo) 150V Power (Pd) 300mW DC current gain (hFE@Ic,Vce) 60@10mA,5V Characteristic frequency (fT) 300MHz Collector cut-off current (Icbo) 50nA Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 500mV@5mA,50mA Working temperature -55℃~+150℃@(Tj) FDV301N  Product Catalog Field Effect Transistor (MOSFET) Type N channel Drain-source voltage (Vdss) 25V Continuous drain current (Id) 220mA Power (Pd) 350mW On-resistance (RDS(on)@Vgs,Id) 4Ω@4.5V,400mA Threshold voltage (Vgs(th)@Id) 1.06V@250uA Gate charge (Qg@Vgs) 700pC@4.5V Input capacitance (Ciss@Vds) 9.5pF@10V Working temperature -55℃~+150℃@(Tj) MJD44H11T4G  Product Catalog Transistor (BJT) Transistor type NPN Collector current (Ic) 8A Collector-emitter breakdown voltage (Vceo) 80V Power (Pd) 1.75W DC current gain (hFE@Ic,Vce) 40@4A,1V Characteristic frequency (fT) 85MHz Collector cut-off current (Icbo) 1uA Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 1V@8A,400mA Working temperature -55℃~+150℃@(Tj) BSS84LT1G  Product Catalog Field Effect Transistor (MOSFET) Type P channel Drain-source voltage (Vdss) 50V Continuous drain current (Id) 130mA Power (Pd) 225mW On-resistance (RDS(on)@Vgs,Id) 10Ω@5V,100mA Threshold voltage (Vgs(th)@Id) 2V@250uA Input capacitance (Ciss@Vds) 30pF@5V Working temperature -55℃~+150℃@(Tj) CAT24C256WI-GT3  Product Catalog EEPROM Interface type I2C Storage capacity 256Kbit Working voltage 1.8V~5.5V Working temperature -40℃~+85℃ FSUSB42MUX  Product Catalog Analog Switches/Multiplexers Working voltage 2.4V~4.4V On-resistance (Ron@VCC) 6.5Ω NUP2105LT1G  Product Catalog Electrostatic and Surge Protection (TVS/ESD) Reverse cut-off voltage (Vrwm) 24V Maximum clamping voltage 44V Peak pulse power (Ppp)@10/1000us 350W Breakdown voltage 26.2V Number of channels: dual Working temperature -55℃~+150℃@(Tj) Type ESD UC2844BD1R2G  Product Catalog AC-DC Controllers and Regulators Power supply voltage 10V~36V Switching frequency 500kHz Maximum duty cycle 48% Topology flyback; boost Working temperature -25℃~+85℃@(TA) MMSD4148T1G  Product Catalog Switching Diodes Diode configuration Stand-alone Forward voltage drop (Vf) 1V@10mA DC reverse withstand voltage (Vr) 100V Average rectified current (Io) 200mA Power 425mW Reverse current (Ir) 5uA@75V Reverse recovery time (trr) 4ns Working temperature -55℃~+150℃@(Tj) MMBT4403LT1G  Product Catalog Transistor (BJT) Transistor type PNP Collector current (Ic) 600mA Collector-emitter breakdown voltage (Vceo) 40V Power (Pd) 300mW DC current gain (hFE@Ic,Vce) 100@150mA, 2V Characteristic frequency (fT) 200MHz Collector cut-off current (Icbo) - Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 750mV@500mA,50mA Working temperature -55℃~+150℃@(Tj) NTR4003NT1G  Product Catalog Field Effect Transistor (MOSFET) Type N channel Drain-source voltage (Vdss) 30V Continuous drain current (Id) 500mA Power (Pd) 690mW On-resistance (RDS(on)@Vgs,Id) 1.5Ω@4V,10mA Threshold voltage (Vgs(th)@Id) 1.4V@250uA Gate charge (Qg@Vgs) 1.15nC@5V Input capacitance (Ciss@Vds) 21pF@5V Working temperature -55℃~+150℃@(Tj) MMBFJ177LT1G  Product Catalog Field Effect Transistor (MOSFET) Type N channel Drain-source voltage (Vdss) 30V Continuous drain current (Id) 500mA Power (Pd) 690mW On-resistance (RDS(on)@Vgs,Id) 1.5Ω@4V,10mA Threshold voltage (Vgs(th)@Id) 1.4V@250uA Gate charge (Qg@Vgs) 1.15nC@5V Input capacitance (Ciss@Vds) 21pF@5V Working temperature -55℃~+150℃@(Tj) MRA4007T3G  Product Catalog General Diodes Diode configuration - Forward voltage drop (Vf) 1.18V@2A DC reverse withstand voltage (Vr) 1kV Average rectified current (Io) 1A Reverse current (Ir) 10uA@1kV