ON Semiconductor Product Recommendations

ON Semiconductor (ONSEMI), headquartered in Phoenix, Arizona, is a leading provider of power solutions. ON Semiconductor's product portfolio includes power and signal management, logic, discrete and custom devices to help customers solve their unique design challenges in automotive, communications, computer, consumer electronics, industrial, LED lighting, medical, military/aerospace and power applications. , which is both fast and cost-effective. ON operates a world-class, value-added supply chain and network of manufacturing plants, ON dealers and design centers in key markets in North America, Europe and Asia Pacific.

Galaxy Core Technology Co., Ltd. is ON Semiconductor's first-level agent in China, selling a full range of ON Semiconductor products, including power and signal management, logic, discrete and customized devices. We promise that the products we sell are all original and genuine products with guaranteed quality. And we can also provide professional technical support and after-sales service.

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The following are recommendations for ON Semiconductor’s best-selling products:

LM393DR2G 

Product Catalog Comparator

Input offset voltage (Vos) 5mV

Input bias current (Ib) 250nA

Hysteresis voltage (Vhys) -

Common Mode Rejection Ratio (CMRR) -

Working voltage 1V~18V; 2V~36V

Output type open set

Output mode -

Supply current per channel 2.5mA

Working temperature 0℃~+70℃

MMBT3906LT1G 

Product Catalog Transistor (BJT)

Transistor type PNP

Collector current (Ic) 200mA

Collector-emitter breakdown voltage (Vceo) 40V

Power (Pd) 300mW

DC current gain (hFE@Ic,Vce) 100@10mA,1V

Characteristic frequency (fT) 250MHz

Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 400mV@5mA,50mA

Working temperature -55℃~+150℃@(Tj)

LM2903DR2G 

Product Catalog Comparator

Input offset voltage (Vos) 7mV

Input bias current (Ib) 250nA

Hysteresis voltage (Vhys) -

Common Mode Rejection Ratio (CMRR) -

Working voltage 1V~18V; 2V~36V

Output type open set

Output mode -

Supply current per channel 2.5mA

Working temperature -40℃~+105℃

BAV99LT1G 

Product Catalog Switching Diodes

Diode configuration 1 pair in series

Forward voltage drop (Vf) 1.25V@150mA

DC reverse withstand voltage (Vr) 100V

Average rectified current (Io) 215mA

Power 300mW

Reverse current (Ir) 1uA@100V

Reverse recovery time (trr) 6ns

Working temperature -65℃~+150℃@(Tj)

SS14 

Product Catalog Schottky Diodes

Forward voltage drop (Vf) 500mV@1A

DC reverse withstand voltage (Vr) 40V

Average rectified current (Io) 1A

Reverse current (Ir) 200uA@40V

BSS138LT1G 

Product Catalog Field Effect Transistor (MOSFET)

Type N channel

Drain-source voltage (Vdss) 50V

Continuous drain current (Id) 200mA

Power (Pd) 225mW

On-resistance (RDS(on)@Vgs,Id) 3.5Ω@5V,200mA

Threshold voltage (Vgs(th)@Id) 1.5V@1mA

Input capacitance (Ciss@Vds) 50pF@25V

Working temperature -55℃~+150℃@(Tj)

2N7002LT1G 

Product Catalog Field Effect Transistor (MOSFET)

Type N channel

Drain-source voltage (Vdss) 60V

Continuous drain current (Id) 115mA

Power (Pd) 225mW

On-resistance (RDS(on)@Vgs,Id) 7.5Ω@10V,500mA

Threshold voltage (Vgs(th)@Id) 2.5V@250uA

Input capacitance (Ciss@Vds) 50pF@25V

Working temperature -55℃~+150℃@(Tj)

MC34063ADR2G 

Product Catalog DC-DC Power Supply Chip

Function type: step-up type; step-down type

Output type adjustable

Input voltage 3V~40V

Output voltage 1.25V~40V

Output current (maximum) 1.5A

Switching frequency 100kHz

Working temperature 0℃~+70℃@(TA)

Synchronous rectification No

Number of output channels 1

Topology: Boost; Buck

Switch tube (internal/external) internal

MC33078DR2G 

Product Catalog Operational Amplifier

Number of amplifiers Dual

Gain bandwidth product (GBP) 16MHz

Input bias current (Ib) 300nA

Slew rate (SR) 7V/us

Output current 37mA

Bandwidth (-3db) -

Working temperature -40℃~+85℃

ESD9B3.3ST5G 

Product Catalog Electrostatic and Surge Protection (TVS/ESD)

Polarity bidirectional

Reverse cut-off voltage (Vrwm) 3.3V

Maximum clamping voltage 11.5V

Peak pulse current (Ipp)@10/1000us 2A

Breakdown voltage 5V

Number of channels single channel

Working temperature -55℃~+150℃@(Tj)

Type ESD

ESD9X3.3ST5G 

Product Catalog Electrostatic and Surge Protection (TVS/ESD)

Polarity Unidirectional

Reverse cut-off voltage (Vrwm) 3.3V

Maximum clamping voltage 10.4V

Peak pulse current (Ipp)@10/1000us 9.8A

Peak pulse power (Ppp)@10/1000us 102W

Breakdown voltage 5V

Number of channels single channel

Working temperature -55℃~+150℃@(Tj)

Type ESD

NCP1654BD65R2G 

Product Catalog AC-DC Controllers and Regulators

Power supply voltage 9V~20V

Switching frequency 58kHz~72kHz

Working temperature -40℃~+125℃

SMF05CT1G 

Product Catalog Electrostatic and Surge Protection (TVS/ESD)

Reverse cut-off voltage (Vrwm) 5V

Maximum clamping voltage 12.5V

Peak pulse power (Ppp)@10/1000us 100W

Breakdown voltage 6.2V

Number of channels: five

Working temperature -40℃~+125℃@(Tj)

Type ESD

NSR0320MW2T1G

Product Catalog Schottky Diodes

Forward voltage drop (Vf) 500mV@900mA

DC reverse withstand voltage (Vr) 20V

Average rectified current (Io) 1A

Reverse current (Ir) 50uA@15V

MMBT5401LT1G 

Product Catalog Transistor (BJT)

Transistor type PNP

Collector current (Ic) 500mA

Collector-emitter breakdown voltage (Vceo) 150V

Power (Pd) 300mW

DC current gain (hFE@Ic,Vce) 60@10mA,5V

Characteristic frequency (fT) 300MHz

Collector cut-off current (Icbo) 50nA

Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 500mV@5mA,50mA

Working temperature -55℃~+150℃@(Tj)

FDV301N 

Product Catalog Field Effect Transistor (MOSFET)

Type N channel

Drain-source voltage (Vdss) 25V

Continuous drain current (Id) 220mA

Power (Pd) 350mW

On-resistance (RDS(on)@Vgs,Id) 4Ω@4.5V,400mA

Threshold voltage (Vgs(th)@Id) 1.06V@250uA

Gate charge (Qg@Vgs) 700pC@4.5V

Input capacitance (Ciss@Vds) 9.5pF@10V

Working temperature -55℃~+150℃@(Tj)

MJD44H11T4G 

Product Catalog Transistor (BJT)

Transistor type NPN

Collector current (Ic) 8A

Collector-emitter breakdown voltage (Vceo) 80V

Power (Pd) 1.75W

DC current gain (hFE@Ic,Vce) 40@4A,1V

Characteristic frequency (fT) 85MHz

Collector cut-off current (Icbo) 1uA

Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 1V@8A,400mA

Working temperature -55℃~+150℃@(Tj)

BSS84LT1G 

Product Catalog Field Effect Transistor (MOSFET)

Type P channel

Drain-source voltage (Vdss) 50V

Continuous drain current (Id) 130mA

Power (Pd) 225mW

On-resistance (RDS(on)@Vgs,Id) 10Ω@5V,100mA

Threshold voltage (Vgs(th)@Id) 2V@250uA

Input capacitance (Ciss@Vds) 30pF@5V

Working temperature -55℃~+150℃@(Tj)

CAT24C256WI-GT3 

Product Catalog EEPROM

Interface type I2C

Storage capacity 256Kbit

Working voltage 1.8V~5.5V

Working temperature -40℃~+85℃

FSUSB42MUX 

Product Catalog Analog Switches/Multiplexers

Working voltage 2.4V~4.4V

On-resistance (Ron@VCC) 6.5Ω

NUP2105LT1G 

Product Catalog Electrostatic and Surge Protection (TVS/ESD)

Reverse cut-off voltage (Vrwm) 24V

Maximum clamping voltage 44V

Peak pulse power (Ppp)@10/1000us 350W

Breakdown voltage 26.2V

Number of channels: dual

Working temperature -55℃~+150℃@(Tj)

Type ESD

UC2844BD1R2G 

Product Catalog AC-DC Controllers and Regulators

Power supply voltage 10V~36V

Switching frequency 500kHz

Maximum duty cycle 48%

Topology flyback; boost

Working temperature -25℃~+85℃@(TA)

MMSD4148T1G 

Product Catalog Switching Diodes

Diode configuration Stand-alone

Forward voltage drop (Vf) 1V@10mA

DC reverse withstand voltage (Vr) 100V

Average rectified current (Io) 200mA

Power 425mW

Reverse current (Ir) 5uA@75V

Reverse recovery time (trr) 4ns

Working temperature -55℃~+150℃@(Tj)

MMBT4403LT1G 

Product Catalog Transistor (BJT)

Transistor type PNP

Collector current (Ic) 600mA

Collector-emitter breakdown voltage (Vceo) 40V

Power (Pd) 300mW

DC current gain (hFE@Ic,Vce) 100@150mA, 2V

Characteristic frequency (fT) 200MHz

Collector cut-off current (Icbo) -

Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 750mV@500mA,50mA

Working temperature -55℃~+150℃@(Tj)

NTR4003NT1G 

Product Catalog Field Effect Transistor (MOSFET)

Type N channel

Drain-source voltage (Vdss) 30V

Continuous drain current (Id) 500mA

Power (Pd) 690mW

On-resistance (RDS(on)@Vgs,Id) 1.5Ω@4V,10mA

Threshold voltage (Vgs(th)@Id) 1.4V@250uA

Gate charge (Qg@Vgs) 1.15nC@5V

Input capacitance (Ciss@Vds) 21pF@5V

Working temperature -55℃~+150℃@(Tj)

MMBFJ177LT1G 

Product Catalog Field Effect Transistor (MOSFET)

Type N channel

Drain-source voltage (Vdss) 30V

Continuous drain current (Id) 500mA

Power (Pd) 690mW

On-resistance (RDS(on)@Vgs,Id) 1.5Ω@4V,10mA

Threshold voltage (Vgs(th)@Id) 1.4V@250uA

Gate charge (Qg@Vgs) 1.15nC@5V

Input capacitance (Ciss@Vds) 21pF@5V

Working temperature -55℃~+150℃@(Tj)

MRA4007T3G 

Product Catalog General Diodes

Diode configuration -

Forward voltage drop (Vf) 1.18V@2A

DC reverse withstand voltage (Vr) 1kV

Average rectified current (Io) 1A

Reverse current (Ir) 10uA@1kV